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VERSION:2.0
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PRODID:UW-Madison-Physics-Events
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SEQUENCE:0
UID:UW-Physics-Event-1479
DTSTART:20090330T180000Z
DURATION:PT1H0M0S
DTSTAMP:20260506T190723Z
LAST-MODIFIED:20090326T170515Z
LOCATION:5280 Chamberlin
SUMMARY:Single Charge Detection in Silicon Using Vertically Coupled Al
  and Si Single-Electron Transistors\, Quantum Computing Seminar\, Luya
 n Sun\, Laboratory for Physical Sciences\, University of Maryland
DESCRIPTION:The background charges in Si/SiO<sub>2</sub> systems may b
 e sources of decoherence for Si qubits. Understanding the charge envir
 onment is thus important for potential quantum information processing 
 in Si. In this talk I will show that at low temperature an Al-AlO<sub>
 x</sub>-Al single electron transistor (SET) acting as the gate of a na
 rrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor can 
 induce a self-aligned and vertically-coupled Si SET at the Si/SiO<sub>
 2</sub> interface. Then I will demonstrate the detection of a single c
 harge defect\, either a single charge trap at the Si/SiO<sub>2</sub> i
 nterface or a single donor in the Si substrate\, using such an SET san
 dwich architecture.  In conclusion\, I will briefly discuss the high m
 obility two-dimensional electron systems fabricated in our group on hy
 drogen-terminated silicon (111) surfaces and our new approach to detec
 ting donor electrons in silicon using a scanned probe based on a quart
 z tuning fork.
URL:https://www.physics.wisc.edu/events/?id=1479
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