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VERSION:2.0
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PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:0
UID:UW-Physics-Event-2613
DTSTART:20120329T150000Z
DURATION:PT1H0M0S
DTSTAMP:20260420T062623Z
LAST-MODIFIED:20120327T120215Z
LOCATION:5310 Chamberlin
SUMMARY:Atomic-Layer Engineering and Topological insulators\, R. G. He
 rb Condensed Matter Seminar\, Seongshik Oh\, Dept. of Physics & Astron
 omy\, Rutgers University
DESCRIPTION:Atomic-layer engineering was first made possible in III-V 
 semiconductors in 1980s by MBE (Molecular Beam Epitaxy)\, and later in
  complex oxides in 1990s by MBE and in 2000s by PLD (Pulsed Laser Depo
 sition). The challenges of atomic-layer engineering in complex-oxides 
 compared to those in semiconductors will be discussed. Then I will des
 cribe how we apply this technique to a new family of materials called 
 topological insulators (TIs). Topological insulators are predicted to 
 have metallic surface states with polarized spins while inside of the 
 material is insulating.  These unique properties pose TIs as promising
  candidates for spintronics and quantum computation. However\, materia
 l problems in the current-generation TIs are a major hurdle to impleme
 nting real TI devices. I will discuss how we utilize the atomic-engine
 ering schemes to overcome this hurdle and navigate through the vastly 
 unexplored territory of topological insulators.   
URL:https://www.physics.wisc.edu/events/?id=2613
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