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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
BEGIN:VEVENT
SEQUENCE:0
UID:UW-Physics-Event-2669
DTSTART:20120521T170000Z
DURATION:PT1H0M0S
DTSTAMP:20260420T041326Z
LAST-MODIFIED:20120514T165427Z
LOCATION:5310 Chamberlin
SUMMARY:Advancements in epitaxial trilayer growth utilizing Nb/Re bila
 yers on sapphire\, R. G. Herb Condensed Matter Seminar\, Paul Welander
 \, MIT Lincoln Laboratory
DESCRIPTION:A new approach to all-epitaxial "trilayer" growth has been
  developed for superconducting Josephson junction applications\, utili
 zing a multi-layer stack which includes buffer layers between the elec
 trodes and the tunnel-barrier. These buffer layers serve as both diffu
 sion barriers and structural transitions between dissimilar materials\
 , and if kept thin (~ 10 nm) proximity effects with the electrodes dom
 inate and the entire structure behaves like an SIS trilayer. This cour
 se has been charted due to advancements in the hetero-epitaxial growth
  of Re (0001) layers on Nb (110) surfaces by MBE. Thick Nb (110) films
  were grown on A-plane sapphire and found to be single-crystal and ato
 mically smooth (rms roughness ~ 0.2-0.3 nm). Thin Re (0001) overlayers
  retained this atomically smooth surface morphology\, providing an ide
 al template onto which an ultra-thin Al2O3 layer could be grown. RHEED
  analysis also indicated that any misfit strain in the Re layer had ne
 arly diminished within the first 10 nm of deposition. These materials 
 have been incorporated into all-epitaxial Nb/Re/Al2O3/Al/Nb trilayers.
  Both the materials analysis and electrical characterization will be r
 eported.
URL:https://www.physics.wisc.edu/events/?id=2669
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