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SEQUENCE:2
UID:UW-Physics-Event-6409
DTSTART:20210414T210000Z
DURATION:PT1H0M0S
DTSTAMP:20260414T233911Z
LAST-MODIFIED:20210414T161637Z
LOCATION:https://teams.microsoft.com/l/meetup-join/19%3ameeting_MGQ3OD
 lmN2UtYjRhZC00ZmEzLWFkNmQtOWM2NTAwNDUwN
SUMMARY:Overlapping Aluminum-Gate Quantum Dots for Valley-Orbit Based 
 Qubits in Si/SiGe\, Thesis Defense\, JP Dodson\, Physics PhD Graduate 
 Student
DESCRIPTION:Variability in valley-orbit state splittings will be a pro
 blem for large-scale implementations of silicon-based quantum processo
 rs. Depending on the particular qubit architecture\, the role of valle
 y-orbit states varies\; however\, a common theme for nearly all silico
 n-based qubits is that valley-orbit splittings must be precisely engin
 eered or have large in situ tunability. Here\, we investigate overlapp
 ing aluminum-gate devices for valley-orbit based qubits in Si/SiGe whi
 ch enable high in situ tunability of valley-orbit states. Spectroscopi
 c measurements of low-lying one- and two-electron valley-orbit states 
 are taken to determine the quantitative relationship between the valle
 y\, singlet-triplet and orbital splittings. By exploiting the dependen
 ce of valley-orbit state splittings on electrostatic confinement and e
 lectron number\, we show progress towards single-shot readout in the (
 4\,1)-(3\,2) electron regime\, allowing for in situ tunability of the 
 qubit frequency and enhancement of the readout window.
\n
\nhttps://te
 ams.microsoft.com/l/meetup-join/19%3ameeting_MGQ3ODlmN2UtYjRhZC00ZmEzL
 WFkNmQtOWM2NTAwNDUwNDI0%40thread.v2/0?context=%7b%22Tid%22%3a%222ca683
 21-0eda-4908-88b2-424a8cb4b0f9%22%2c%22Oid%22%3a%2261f2b766-a8e8-4b5b-
 9783-d4da1ab09cae%22%7d
URL:https://www.physics.wisc.edu/events/?id=6409
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