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PRODID:UW-Madison-Physics-Events
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SEQUENCE:1
UID:UW-Physics-Event-8799
DTSTART:20240701T210000Z
DTEND:20240701T230000Z
DTSTAMP:20260413T223247Z
LAST-MODIFIED:20240618T204040Z
LOCATION:5310 Chamberlin Hall\; https://uwmadison.zoom.us/j/2788251617
 ?omn=98932922665
SUMMARY:Tuning Techniques for Si/SiGe Quantum Dot Qubit Devices\, Prel
 iminary Exam\, Sanghyeok Park\, Physics PhD Graduate Student
DESCRIPTION:In this talk\, I delve into the physics of quantum bits (q
 ubits) within semiconductor quantum dot devices and explore how their 
 tunability enhances their potential for quantum computing applications
 . I will discuss two distinct projects centered on the tunability of S
 i/SiGe quantum dot devices: (i) single-shot latched readout of a quant
 um dot hybrid qubit (QDHQ) using barrier gate pulsing\, and (ii) lower
 ing and controlling qubit operation voltages using gate-biased illumin
 ation. In the first project\, I will present single-shot measurements 
 and demonstrate coherent Larmor oscillations of a QDHQ. I will detail 
 several methods implemented to optimize a QDHQ for single-shot readout
 \, a critical component for advanced quantum computing protocols. Thes
 e methods include a barrier gate pulsing technique that dynamically co
 ntrols quantum dot tunnel rates to facilitate the qubit latched readou
 t process. In the second project\, I will introduce a technique for ad
 justing the operating voltages of a quantum dot device. This approach 
 leverages near infra-red light illumination in the presence of applied
  voltages to modify the trapped charges under the gates\, enabling tun
 ing of the trapped charges to change the operating points. By using th
 is technique\, sub-100 mV tuning across all gates in the (1\,1\,1) cha
 rge configuration for qubit operation of the triple quantum dot device
  is achieved. This work with Si/SiGe quantum dot devices provides a pr
 omising step towards the realization of scalable and tunable quantum p
 rocessors.
URL:https://www.physics.wisc.edu/events/?id=8799
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