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PRODID:UW-Madison-Physics-Events
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UID:UW-Physics-Event-9660
DTSTART:20260512T190000Z
DTEND:20260512T210000Z
DTSTAMP:20260413T184600Z
LAST-MODIFIED:20260413T165258Z
LOCATION:Chamberlin 5310
SUMMARY:Single-spin readout in Si/SiGe quantum dots via proton-assiste
 d tunneling\, Graduate Program Event\, Owen Eskandari
DESCRIPTION:In Si/SiGe spin qubits\, much attention has focused on hig
 h-fidelity and tunable gate operations\, yet achieving the same goals 
 for readout\, which is a core requirement for quantum error correction
 \, has received less attention. Traditionally\, single-electron spin q
 ubits are read out using either of two methods. Elzerman readout relie
 s on proximity to a reservoir. Parity readout requires an additional e
 lectron in the double dot system used for readout and a large valley s
 plitting to achieve a large singlet-triplet splitting. Here\, we prese
 nt a reservoir-free readout scheme for single-electron qubits in a dou
 ble dot that does not rely on additional electrons or the need for a l
 arge valley splitting. This readout scheme uses photon-assisted tunnel
 ing (PAT)\, enabling spin-to-charge conversion and readout via a nearb
 y charge sensor. We show that features in the energy dispersion arisin
 g from random alloy disorder may be used to optimize the PAT drive par
 ameters and achieve high-fidelity and tunable readout. To provide phys
 ically realistic and accurate estimates\, we develop a new scheme for 
 computing localized electron states in a double dot\, which allows us 
 to make use of the MaSQE simulation tool. These results pave the way f
 or implementing a new high-fidelity readout scheme in single-electron 
 qubits.
URL:https://www.physics.wisc.edu/events/?id=9660
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