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VERSION:2.0
CALSCALE:GREGORIAN
PRODID:UW-Madison-Physics-Events
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SEQUENCE:0
UID:UW-Physics-Event-9856
DTSTART:20260922T190000Z
DTEND:20260922T210000Z
DTSTAMP:20260919T043416Z
LAST-MODIFIED:20260916T142203Z
LOCATION:5310 Chamberlin
SUMMARY:Random-Alloy Disorder Analysis in Si/SiGe Systems\, Preliminar
 y Exam\, Emma Brann\, Physics PhD Graduate Student
DESCRIPTION:Si/SiGe heterostructures look promising as a scalable plat
 form for quantum computing\, but the degeneracy between the low-lying 
 states in the silicon conduction band currently limits device fidelity
 . Introducing a small concentration of germanium to the quantum well o
 ffers a solution to this "valley splitting problem" by introducing ran
 dom-alloy disorder. In this work\, we examine the influence of this di
 sorder in experimental results\, comparing data trends and correlation
 s against simulated and analytical results. We also present a numerica
 l framework designed to reproduce disorder-induced errors using simula
 ted charge stability diagrams.<br>\n<br>\n
URL:https://www.physics.wisc.edu/events/?id=9856
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