Events on Monday, March 8th, 2021
- Plasma Theory Seminar
- Modeling RFPs with self-consistent steady states of a cylindrical pinch
- Time: 9:00 am
- Place: zoom meeting
- Speaker: Urvashi Gupta, UW-Madison
- Abstract: Chris Hegna is inviting you to a scheduled Zoom meeting.
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Meeting ID: 954 878 7359
Passcode: 4Ugg1v
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Meeting ID: 954 878 7359
Passcode: 596249 - Plasma Physics (Physics/ECE/NE 922) Seminar
- Progress on high-field HTS magnets for SPARC, a compact net-energy fusion tokamak
- Time: 12:00 pm
- Place: Zoom
- Speaker: Prof. Zach Hartwig, MIT
- Abstract: Chris Hegna is inviting you to a scheduled Zoom meeting.
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Meeting ID: 918 3541 9103
Passcode: 578475
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Meeting ID: 918 3541 9103
Passcode: 578475
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162.255.37.11 (US West)
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115.114.115.7 (India Hyderabad)
213.19.144.110 (Amsterdam Netherlands)
213.244.140.110 (Germany)
103.122.166.55 (Australia)
149.137.40.110 (Singapore)
64.211.144.160 (Brazil)
69.174.57.160 (Canada)
207.226.132.110 (Japan)
Meeting ID: 918 3541 9103
Passcode: 578475 - Graduate Program Event
- Electron-electron interactions in Si/SiGe Quantum Dots
- Time: 2:00 pm
- Place:
- Speaker: Ekmel Ercan, Physics PhD Graduate Student
- Abstract: In this talk I present our work on the effects of confinement strength on two-electron states in an electrostatically-defined quantum dot in a Si/SiGe quantum well at zero magnetic field, focusing on geometries appropriate for qubits. I will discuss that the experimental signatures of strong electron-electron (e-e) interactions in these devices can be subtle. While the suppression of the singlet-triplet splitting in two-electron quantum dots formed in direct band gap materials is a clear indication of e-e interactions, in silicon devices this effect can be masked by the additional valley degree of freedom of the conduction band electrons, when the quantum well interface is flat. I will further argue that interfacial-disorder-induced valley-orbit coupling, on the other hand, can induce this suppression. Next, I will discuss implications of this physics on charge noise sensitivity and demonstrate calculations indicating that dramatic changes in dephasing times can be observed by slightly changing the confinement strength. Finally, I will discuss the role of e-e interactions in two recent experiments demonstrating (1) the use of valley-orbit states to probe Si/SiGe interface, and (2) a spectroscopically-dense set of low-lying energy levels.
- Host: Sue Coppersmith, Faculty Advisor