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Events on Monday, March 8th, 2021

Plasma Theory Seminar
Modeling RFPs with self-consistent steady states of a cylindrical pinch
Time: 9:00 am
Place: zoom meeting
Speaker: Urvashi Gupta, UW-Madison
Abstract: Chris Hegna is inviting you to a scheduled Zoom meeting.

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Meeting ID: 954 878 7359
Passcode: 4Ugg1v

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64.211.144.160 (Brazil)
69.174.57.160 (Canada)
207.226.132.110 (Japan)
Meeting ID: 954 878 7359
Passcode: 596249
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Plasma Physics (Physics/ECE/NE 922) Seminar
Progress on high-field HTS magnets for SPARC, a compact net-energy fusion tokamak
Time: 12:00 pm
Place: Zoom
Speaker: Prof. Zach Hartwig, MIT
Abstract: Chris Hegna is inviting you to a scheduled Zoom meeting.

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Meeting ID: 918 3541 9103
Passcode: 578475
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Meeting ID: 918 3541 9103
Passcode: 578475
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Join by H.323
162.255.37.11 (US West)
162.255.36.11 (US East)
115.114.131.7 (India Mumbai)
115.114.115.7 (India Hyderabad)
213.19.144.110 (Amsterdam Netherlands)
213.244.140.110 (Germany)
103.122.166.55 (Australia)
149.137.40.110 (Singapore)
64.211.144.160 (Brazil)
69.174.57.160 (Canada)
207.226.132.110 (Japan)
Meeting ID: 918 3541 9103
Passcode: 578475
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Graduate Program Event
Electron-electron interactions in Si/SiGe Quantum Dots
Time: 2:00 pm
Place:
Speaker: Ekmel Ercan, Physics PhD Graduate Student
Abstract: In this talk I present our work on the effects of confinement strength on two-electron states in an electrostatically-defined quantum dot in a Si/SiGe quantum well at zero magnetic field, focusing on geometries appropriate for qubits. I will discuss that the experimental signatures of strong electron-electron (e-e) interactions in these devices can be subtle. While the suppression of the singlet-triplet splitting in two-electron quantum dots formed in direct band gap materials is a clear indication of e-e interactions, in silicon devices this effect can be masked by the additional valley degree of freedom of the conduction band electrons, when the quantum well interface is flat. I will further argue that interfacial-disorder-induced valley-orbit coupling, on the other hand, can induce this suppression. Next, I will discuss implications of this physics on charge noise sensitivity and demonstrate calculations indicating that dramatic changes in dephasing times can be observed by slightly changing the confinement strength. Finally, I will discuss the role of e-e interactions in two recent experiments demonstrating (1) the use of valley-orbit states to probe Si/SiGe interface, and (2) a spectroscopically-dense set of low-lying energy levels.
Host: Sue Coppersmith, Faculty Advisor
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